vishay siliconix SI8466EDB document number: 63683 s12-2183-rev. a, 10-sep-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com n-channel 8 v (d-s) mosfet features ? trenchfet ? power mosfet ? typical esd protection 3000 v hbm ? ultra-small 1 mm x 1 mm maximum outline ? ultra-thin 0.548 mm maximum height ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? low on-resistance load switch for portable devices - low power consumption, low voltage drop - increased battery life - space savings on pcb notes: a. surface mounted on 1" x 1" fr4 board with full copper, t = 10 s. b. surface mounted on 1" x 1" fr4 board with minimum copper, t = 10 s. c. refer to ipc/jedec (j-std -020), no manual or hand soldering. d. in this document, any reference to case represents t he body of the micro foot device and foot is the bump. e. based on t a = 25 c. product summary v ds (v) r ds(on) ( ? ) max. i d (a) a, e q g (typ.) 8 0.043 at v gs = 4.5 v 5.4 6.8 nc 0.046 at v gs = 2.5 v 5.2 0.060 at v gs = 1.5 v 4.6 0.090 at v gs = 1.2 v 3.0 micro foot device markin g : 8 466 xxx = date/lot tracea b ility code orderin g information: si 8 466edb-t2-e1 (lead (p b )-free and halogen-free) b u mp side v ie w backside v ie w xxx 8 466 s d g s 1 2 4 3 n -channel mosfet s d g absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 8 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) t a = 25 c i d 5.4 a a t a = 70 c 4.4 a t a = 25 c 3.6 b t a = 70 c 2.9 b pulsed drain current (t = 300 s) i dm 20 continuous source-drain diode current t c = 25 c i s 1.5 a t a = 25 c 0.65 b maximum power dissipation t a = 25 c p d 1.8 a w t a = 70 c 1.1 a t a = 25 c 0.78 b t a = 70 c 0.5 b operating junction and storage temperature range t j , t stg - 55 to 150 c package reflow conditions c vpr 260 ir/convection 260
www.vishay.com 2 document number: 63683 s12-2183-rev. a, 10-sep-12 vishay siliconix SI8466EDB this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a. surface mounted on 1" x 1" fr4 board with full copper. b. maximum under steady stat e conditions is 100 c/w. c. surface mounted on 1" x 1" fr4 board with minimum copper. d. maximum under steady stat e conditions is 190 c/w. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b t = 10 s r thja 55 70 c/w maximum junction-to-ambient c, d t = 10 s 125 160 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 8v v ds temperature coefficient ? v ds /t j i d = 250 a 3.5 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 3 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.35 0.7 v gate-source leakage i gss v ds = 0 v, v gs = 5 v 3 a zero gate voltage drain current i dss v ds = 8 v, v gs = 0 v 1 a v ds = 8 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 4.5 v 10 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 2 a 0.035 0.043 ? v gs = 2.5 v, i d = 1 a 0.037 0.046 v gs = 1.5 v, i d = 1 a 0.045 0.060 v gs = 1.2 v, i d = 0.5 a 0.055 0.090 forward transconductance a g fs v ds = 4 v, i d = 2 a 30 s dynamic b input capacitance c iss v ds = 4 v, v gs = 0 v, f = 1 mhz 710 pf output capacitance c oss 270 reverse transfer capacitance c rss 192 total gate charge q g v ds = 4 v, v gs = 4.5 v, i d = 2 a 8.5 13 nc gate-source charge q gs 0.9 gate-drain charge q gd 1.6 gate resistance r g v gs = 0.1 v, f = 1 mhz 6 ? tu r n - o n d e l ay t i m e t d(on) v dd = 4 v, r l = 2 ? i d ? 2 a, v gen = 4.5 v, r g = 1 ? 10 20 ns rise time t r 15 30 turn-off delay time t d(off) 40 80 fall time t f 10 20
document number: 63683 s12-2183-rev. a, 10-sep-12 www.vishay.com 3 vishay siliconix SI8466EDB this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. typical characteristics (25 c, unless otherwise noted) specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit drain-source body diode characteristics continuous source-drain diode current i s t a = 25 c 1.5 a pulse diode forward current i sm 20 body diode voltage v sd i s = 1.5 a, v gs = 0 0.7 1.2 v body diode reverse recovery time t rr i f = 2 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 715nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 15 output characteristics 0 4 8 12 16 20 0 3 6 9 12 15 i gss - gate current (ma) v gs - gate-source voltage (v) t j = 25 c on-resistance vs. drain current and gate voltage 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 10 -9 0 3 6 9 12 15 i gss - gate current (a) v gs - gate-to-source voltage (v) t j = 150 c t j = 25 c
www.vishay.com 4 document number: 63683 s12-2183-rev. a, 10-sep-12 vishay siliconix SI8466EDB this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 5 v thru 1.5 v v gs = 1 v 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0 4 8 12 16 20 r ds(on) - on-resistance () i d - drain current (a) v gs = 1.2 v v gs = 2.5 v v gs = 1.5 v v gs = 4.5 v 0 1 2 3 4 5 0 2 4 6 8 10 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 6.4 v v ds = 2 v v ds = 4 v i d = 2 a transer characteristics capacitance on-resistance s. junction temperature 0 4 8 12 16 20 0.0 0.4 0.8 1.2 1.6 2.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 200 400 600 800 1000 1200 0 2 4 6 8 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) v gs = 4.5 v, 2.5 v, 1.5 v, i d = 2 a v gs = 1.2 v, i d = 0.5 a
document number: 63683 s12-2183-rev. a, 10-sep-12 www.vishay.com 5 vishay siliconix SI8466EDB this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j - temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0 1 2 3 4 5 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 2 a 0 5 10 15 20 25 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 10 s, 1s 100 ms 100 s limited by r ds(on) * 1 ms t a = 25 c bvdss limited 10 ms dc
www.vishay.com 6 document number: 63683 s12-2183-rev. a, 10-sep-12 vishay siliconix SI8466EDB this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) note: when mounted on 1" x 1" fr4 with full copper. * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 1 2 3 4 5 0 25 50 75 100 125 150 i d - drain current (a) t a - ambient temperature ( c) ower derating 0.0 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er dissipation ( w )
document number: 63683 s12-2183-rev. a, 10-sep-12 www.vishay.com 7 vishay siliconix SI8466EDB this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient (1" x 1" fr4 board with full copper) 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =100 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-ambient (1" x 1" fr4 board with minimum copper) 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =190 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05
vishay siliconix SI8466EDB document number: 63683 s12-2183-rev. a, 10-sep-12 www.vishay.com 8 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com package outline micro foot 1 mm x 1 mm: 4-bump (2 x 2, 0.5 mm pitch) notes (unless otherwise specified): 1. all dimensions are in millimeters. 2. four (4) solder bumps are lead (pb)-free 95.5s n/3.8ag/0.7cu with diameter ? 0.30 mm to 0.32 mm. 3. backside surface is coated with a ti/ni/ag layer. 4. non-solder mask defined copper landing pad. 5. ? ? is location of pin 1. notes: a. use millimeters as the primary measurement. vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63683 . s d g s xxx 8 466 e d s a2 a1 a s e d 4 x ? b 2 1 4 3 recommended land e mark on backside of die 4 x ? 0.24 to 0.26 n ote 4 solder mask ~ ? 0.25 b u mp n ote 2 dim. millimeters a inches min. nom. max. min. nom. max. a 0.462 0.505 0.548 0.0181 0.0198 0.0215 a 1 0.220 0.250 0.280 0.0086 0.0098 0.0110 a 2 0.242 0.255 0.268 0.0095 0.0100 0.0105 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 d 0.920 0.960 1.000 0.0362 0.0378 0.0394
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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